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DescriptionCompact light source with isolated heat sink for improved heat dissipation and high current chip technology for increased light output.

DetailsParametersColor of emissionPure Green (554-566 nm)Electrical power4.2 WHighBrightnessΦV680 lmIV228 cdΦE1490 mWIE500 mW/srBeam angle∢120 °Operating temperatureTop min.-40 °CTop max.85 °CDimensionl3.0 mmw3.0 mmh0.75 mmApplication fieldsIndustrialProjection & displayFactory automationMobile & wearablesVisualizationLightingEntertainment
Maximum RatingsParameter Symbol ValuesOperating Temperature Top min.max.-40 °C85 °CStorage Temperature Tstg min.max.-40 °C85 °CJunction Temperature Tj max. 150 °CForward CurrentTS = 25 °CIF min.max.40 mA5000 mAForward Current pulsedD = 0.5 ; f = 120 Hz; TS = 25 °CIF pulse 8000 mAESD withstand voltageacc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B)VESD 8 kV
CharacteristicsIF = 1400 mA; TS = 25 °CParameter Symbol ValuesChromaticity Coordinate 2)acc. CIE 1931 (within λ = 500...600 nm)CxCytyp.typ.0.3220.639Peak Wavelength λpeak typ. 520.0 nmSpectral bandwidth at 50% Irel,max ∆λ typ. 100.0 nmViewing angle at 50% IV 2φ typ. 120 °Radiating surface Acolor typ. 1.55 x 1.24mm²Partial Flux acc. CIE 127:2007 3)IF = 1400 mAΦE/V, 120° typ. 0.76Forward Voltage 4)IF = 1400 mAVF min.typ.max.2.75 V3.00 V3.50 VReal thermal resistance junction/solderpoint 5) RthJS real typ.max.2.6 K / W3.2 K / WElectrical thermal resistance junction/solderpoint 5)with efficiency ηe = 32 %RthJS elec. typ.max.1.8 K / W2.2 K / W