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DescriptionOSLON Black Flat S is able to meet a wide range of requirements. The SMT device is very stable, durable and can be used with standard processes. A new solder pad layout allows for high reliability and improved thermal management. The compact chips not only deliver high light output, they are also individually addressable with an ensured chip-to-chip contrast which makes this LED an ideal solution for Adaptive Driving Beam (ADB).

DetailsParametersColor of emissionWhiteElectrical power9.1 WUltra HighBrightnessΦV1180 lmIV391 cdΦE3640 mWIE1210 mW/srBeam angle∢120 °Operating temperatureTop min.-40 °CTop max.125 °CDimensionl5.7 mmw3.75 mmh0.43 mmApplication fieldsAutomotive & mobilityStatic forward lighting
Maximum RatingsParameter Symbol ValuesOperating Temperature Top min.max.-40 °C125 °CStorage Temperature Tstg min.max.-40 °C125 °CJunction Temperature Tj max. 150 °CJunction Temperature for short time applications* Tj max. 175 °CForward currentTS = 25 °CIF min.max.50 mA1500 mASurge currentt ≤ 10 µs; D = 0.005 ; TS = 25 °CIFS max. 3000 mAESD withstand voltageacc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B)VESD 8 kVReverse current 2) IR max. 200 mA
CharacteristicsIF = 1000 mA; TS = 25 °CParameter Symbol ValuesChromaticity Coordinate 3) CxCytyp.typ.0.3220.334Viewing angle at 50% IV 2φ typ. 120 °Radiating surface Acolor typ. 3,3 mm²Forward Voltage 4)IF = 1000 mAVF min.typ.max.8.15 V9.05 V11.15 VReverse voltage (ESD device) VR ESD min. 45 VReverse voltage 2)IR = 20 mAVR max. 1.2 VChip to Chip Contrast - typ. 1:200Real thermal resistance junction/solderpoint 5) RthJS real typ.max.1.30 K / W1.60 K / WElectrical thermal resistance junction/solderpoint 5)with efficiency ηe = 37 %RthJS elec. typ.max.0.82 K / W1.01 K / W