DetailsParametersColor of emissionAmber (609-624 nm)Electrical power37.0 WUltra HighBrightnessΦV2200 lmIV736 cdΦE9070 mWIE3040 mW/srBeam angle∢120 °Dimensionl27.0 mmw15.5 mmh1.5 mmApplication fieldsIndustrialProjection & displayMobile & wearablesVisualization
Maximum RatingsParameter Symbol ValuesStorage Temperature Tstg min.max.-40 °C85 °CJunction Temperature Tj max. 125 °CForward CurrentTj = Tj,maxIF min.max.200 mA8000 mAForward Current pulsedD = 0.6; f = 240 Hz; Tj = Tj,maxIF pulse 8000 mASurge CurrenttP ≤ 50 μs; D = 0.1 ; Tj = Tj,maxIFS max. 10000 mAESD withstand voltageacc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)VESD 2 kVReverse current 2) IR max. 200 mAMax. voltage difference anode-board, cathode-board |∆Va-b|, |∆Vc-b| max. 40 V
TBoard = 25 °C; IF = 6000 mA; f = 1000 Hz; D = 0.25Parameter Symbol ValuesPeak Wavelength λpeak typ. 622 nmDominant Wavelength 3) λdom min.typ.max.612 nm614 nm618 nmSpectral bandwidth at 50% Irel,max ∆λ typ. 17 nmViewing angle at 50% IV 2φ typ. 120 °Radiating surface Acolor typ. 2.6 x 1.55 mm²Partial Flux acc. CIE 127:2007 4)IF = 6000 mAΦE/V, 120° typ. 0.77Forward Voltage 5)IF = 6000 mAVF min.typ.max.5.6 V6.2 V7.0 VReverse voltage (ESD device) VR ESD min. 45 VReverse voltage 2)IR = 20 mAVR max. 1.2 VReal thermal resistance junction/board RthJB real typ. 1.1 K / WElectrical thermal resistance junction/boardwith efficiency ηe = 22 %RthJB elec. typ. 0.86 K / W