规格书下载: https://look.ams-osram.com/m/63d3ab3482ea39e7/original/LE-A-Q7WP-AM.pdf

DescriptionHigh luminance device in a reliable ceramic package configuration dedicated for RGB projection systems in automotive enviroments.

DetailsParametersColor of emissionAmber (609-624 nm)Electrical power3.1 WHighBrightnessΦV470 lmIV169 cdΦE1940 mWIE698 mW/srBeam angle∢120 °Operating temperatureTop min.-40 °CTop max.105 °CDimensionl5.75 mmw4.68 mmh1.25 mmApplication fieldsIndustrialProjection & displayMobile & wearablesVisualizationAutomotive & mobilityProjection
https://look.ams-osram.com/m/63d3ab3482ea39e7/original/LE-A-Q7WP-AM.pdfMaximum RatingsParameter Symbol ValuesOperating Temperature Top min.max.-40 °C105 °CStorage Temperature Tstg min.max.-40 °C105 °CJunction Temperature Tj max. 125 °CForward CurrentTS = 25 °C; per chipIF min.max.40 mA5000 mAForward Current pulsedD = 0.5 ; f = 120 Hz; TS = 25 °C; per chipIF pulse 6000 mAESD withstand voltageacc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)VESD 2 kVReverse current 2) IR max. 200 mA
CharacteristicsIF = 1400 mA; TS = 25 °C; per chipParameter Symbol ValuesPeak Wavelength λpeak typ. 624 nmDominant Wavelength 3) λdom min.typ.max.612 nm617 nm624 nmSpectral bandwidth at 50% Irel,max ∆λ typ. 18 nmViewing angle at 50% IV 2φ typ. 120 °Radiating surface Acolor typ. 1.54 x 2.59mm²Partial Flux acc. CIE 127:2007 4)IF = 1400 mAΦE/V, 120° typ. 0.82Forward Voltage 5)IF = 1400 mA; per ChipVF min.typ.max.2.00 V2.20 V2.90 VReverse voltage (ESD device) VR ESD min. 45 VReverse voltage 2)IR = 20 mAVR max. 1.2 VReal thermal resistance junction/solderpoint 6) RthJS real typ.max.1.00 K / W1.30 K / WElectrical thermal resistance junction/solderpoint 6)with efficiency ηe = 25 %RthJS elec. typ.max.0.75 K / W0.98 K / W