DetailsParametersColor of emissionBlue (450-480 nm)Electrical power21.0 WUltra HighBrightnessΦV242 lmIV79.3 cdΦE6920 mWIE2260 mW/srBeam angle∢120 °Dimensionl7.6 mmw6.8 mmh1.4 mmApplication fieldsIndustrialProjection & displayMobile & wearablesVisualizationMaximum RatingsParameter Symbol ValuesStorage Temperature Tstg min.max.-40 °C100 °CJunction Temperature Tj max. 150 °CForward CurrentTj = Tj,maxIF min.max.200 mA10000 mAForward Current pulsedD = 0.7; f = 240 Hz; Tj = Tj,maxIF pulse 12000 mASurge CurrenttP ≤ 50 μs; D = 0.1 ; Tj = Tj,maxIFS max. 14000 mAESD withstand voltageacc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)VESD 2 kVReverse current 2) IR max. 200 mAMax. voltage difference anode-board, cathode-board |∆Va-b|, |∆Vc-b| max. 40 VCharacteristicsTBoard = 25 °C; IF = 6000 mA; f = 1000 Hz; D = 0.25Parameter Symbol ValuesPeak Wavelength λpeak typ. 450 nmDominant Wavelength 3) λdom min.typ.max.452 nm456 nm460 nmSpectral bandwidth at 50% Irel,max ∆λ typ. 23 nmViewing angle at 50% IV 2φ typ. 120 °Radiating surface Acolor typ. 1.55 x 1.2 mm²Partial Flux acc. CIE 127:2007 4)IF = 6000 mAΦE/V, 120° typ. 0.77Forward Voltage 5)IF = 6000 mAVF min.typ.max.3.20 V3.50 V3.80 VReverse voltage (ESD device) VR ESD min. 45 VReverse voltage 2)IR = 20 mAVR max. 1.2 VReal thermal resistance junction/solderpoint RthJS real typ. 1.6 K / WElectrical thermal resistance junction/solderpointwith efficiency ηe = 31 %RthJS elec. typ. 1.1 K / W