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DescriptionHigh luminance device in a reliable ceramic package configuration dedicated for RGB projection systems in automotive enviroments.ParametersColor of emissionGreen (565-575 nm)Electrical power4.1 WHighBrightnessΦV1460 lmIV331 cdΦE3200 mWIE726 mW/srBeam angle∢130 °Operating temperatureTop min.-40 °CTop max.125 °CDimensionl5.75 mmw4.68 mmh1.25 mmApplication fieldsIndustrialProjection & displayMobile & wearablesVisualizationAutomotive & mobilityProjectionMaximum RatingsParameter Symbol ValuesOperating Temperature Top min.max.-40 °C125 °CStorage Temperature Tstg min.max.-40 °C125 °CJunction Temperature Tj max. 150 °CForward CurrentTS = 25 °C; per chipIF min.max.40 mA5000 mAForward Current pulsedD = 0.5 ; f = 120 Hz; TS = 25 °C; per chipIF pulse 6000 mAESD withstand voltageacc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)VESD 2 kVReverse current 2) IR max. 200 mACharacteristicsIF = 1400 mA; TS = 25 °C; per chipParameter Symbol ValuesChromaticity Coordinate 3)acc. to CIE 1931; within λ = 500 ... 600 nmCxCytyp.typ.0.3170.642Peak Wavelength λpeak typ. 520 nmSpectral bandwidth at 50% Irel,max ∆λ typ. 100 nmViewing angle at 50% IV 2φ typ. 130 °Radiating surface Acolor typ. 1.55 x 2.55mm²Partial Flux acc. CIE 127:2007 4)IF = 1400 mAΦE/V, 120° typ. 0.77Forward Voltage 5)IF = 1400 mA; per ChipVF min.typ.max.2.80 V2.95 V3.50 VReverse voltage (ESD device) VR ESD min. 45 VReverse voltage 2)IR = 20 mAVR max. 1.2 VReal thermal resistance junction/solderpoint 6) RthJS real typ.max.1.00 K / W1.30 K / WElectrical thermal resistance junction/solderpoint 6)with efficiency ηe = 27 %RthJS elec. typ.max.0.73 K / W0.95 K / W