DetailsParametersColor of emissionInfrared (>800 nm)CurrentIF1000 mAPeak wavelengthλ850 nmBrightnessΦE930 mWIE430 mW/srDimensionl4.4 mmw4.4 mmh2.4 mmOperating temperatureTop min.-40 °CTop max.125 °CApplication fieldsIndustrialRoboticsHome & building automationMaterial processingFactory automationAppliances & toolsAccess control & securityMedical & healthMedical Lighting
Maximum RatingsParameter Symbol ValuesOperating Temperature Top min.max.-40 °C125 °CStorage Temperature Tstg min.max.-40 °C125 °CJunction Temperature 2) Tj max. 125 °CForward Current 2) IF max. 1200 mAForward Current pulsedt ≤ 10 ms; D ≤ 0.1 ; TC = 25 °CIF pulse max. 2000 mAESD withstand voltageacc. ANSI/ESDA/JEDEC JS-001 (HBM, Class 0)VESD ESD sensitive deviceReverse voltage 3) VR Not designed forreverse operation
CharacteristicsIF = 1000 mA; TC = 25 °CParameter Symbol ValuesTotal radiant flux 4) ΦE typ. 930 mWPeak Wavelength 5)IF = 1000 mAλpeak min.typ.max.835 nm850 nm875 nmViewing angle at 50% IV 2φ typ. 100 °Forward Voltage 6)4)IF = 1000 mAVF min.typ.max.1.30 V1.80 V2.30 VReverse current 3) IR Not designedfor reverseoperationElectrical thermal resistance junction/case RthJC elec. typ. 6.0 K / W