ParametersColor of emissionInfrared (>800 nm)CurrentIF700 mAPeak wavelengthλ850 nmBrightnessΦE2580 mWIE1200 mW/srDimensionl7.0 mmw7.0 mmh3.7 mmOperating temperatureTop min.-40 °CTop max.125 °CApplication fieldsIndustrialRoboticsHome & building automationMaterial processingFactory automationAppliances & toolsAccess control & securityMedical & healthMedical Lighting
Maximum RatingsParameter Symbol ValuesOperating Temperature Top min.max.-40 °C125 °CStorage Temperature Tstg min.max.-40 °C125 °CJunction Temperature 2) Tj max. 125 °CForward Current 2) IF max. 1000 mAForward Current pulsedt ≤ 10 ms; D ≤ 0.1 ; TC = 25 °CIF pulse max. 2000 mAESD withstand voltageacc. ANSI/ESDA/JEDEC JS-001 (HBM, Class 0)VESD ESD sensitive deviceReverse voltage 3) VR Not designed forreverse operation
CharacteristicsIF = 700 mA; TC = 25 °C; all chips operated in seriesParameter Symbol ValuesTotal radiant flux 4) ΦE typ. 2.58 WPeak Wavelength 5)IF = 700 mAλpeak min.typ.max.835 nm850 nm875 nmViewing angle at 50% IV 2φ typ. 100 °Forward Voltage 6)4)IF = 700 mAVF min.typ.max.5.20 V6.83 V9.20 VReverse current 3) IR Not designedfor reverseoperationElectrical thermal resistance junction/case RthJC elec. typ. 2.8 K / W