DescriptionIndustry's most robust high power ceramic package with glass lens for high performance over life.DatasheetSelect & orderContact usSupport

ParametersColor of emissionInfrared (>800 nm)WhiteElectrical power3.9 W4.8 WHighHighBrightnessΦV480 lmBeam angle∢95 °Operating temperatureTop min.-40 °CTop max.145 °CDimensionl7.0 mmw7.0 mmh3.75 mmApplication fieldsIndustrialAccess control & security
Maximum RatingsParameter Symbol Values Values● infrared(940 nm)● whiteOperating Temperature Top min.max.-40 °C145 °C-40 °C145 °CStorage Temperature Tstg min.max.-40 °C145 °C-40 °C145 °CJunction Temperature 2) Tj max. 145 °C 145 °CForward Current 2) IF max. 1500 mA 1500 mAForward Current pulsedinfrared: t ≤ 150 μs; D ≤ 0.1; TC = 25 °C;white: t ≤ 10 ms; D ≤ 0.1; TC = 25 °CIF pulse max. 5000 mA 1500 mAESD withstand voltageacc. ANSI/ESDA/JEDEC JS-001 (HBM, Class 0)VESD ESD sensitivedeviceESD sensitivedeviceReverse voltage 3) VR Not designedfor reverseoperationNot designedfor reverseoperationCharacteristicsIF = 700 mA; TC = 25 °C; all chips operated in seriesParameter Symbol Values Values● infrared(940 nm)● whiteChromaticity Coordinate 4) CxCytyp.typ.0.3350.340Total radiant flux 5) ΦE typ. 1.9 WLuminous Flux 5) ΦV typ. 480 lmPeak Wavelength 6)IF = 700 mAλpeak min.typ.max.920 nm940 nm960 nmViewing angle at 50% IV 2φ typ. 95 ° 95 °Forward Voltage 7)5)IF = 700 mAVF min.typ.max.5.40 V5.60 V7.40 V5.60 V6.90 V7.60 VReverse current 3) IR Not designedfor reverseoperationNot designedfor reverseoperationElectrical thermal resistance junction/caseValue in the first column relates to full package withall chips operated simultaneously.RthJC elec. typ. 2.8 K / W