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ParametersColor of emissionInfrared (>800 nm)CurrentIF70 mAPeak wavelengthλ950 nmBrightnessΦE35 mWIE6 mW/srBeam angle∢140 °Dimensionl1.0 mmw0.5 mmh0.45 mmOperating temperatureTop min.-40 °CTop max.85 °CApplication fieldsIndustrialFactory automationAppliances & toolsAccess control & securityMobile & wearablesBody trackingMaximum RatingsTA = 25 °CParameter Symbol ValuesOperating temperature Top min.max.-40 °C85 °CStorage temperature Tstg min.max.-40 °C85 °CForward current IF max. 70 mASurge currenttp ≤ 700 µs; D = 0.005 IFSM max. 0.7 AReverse voltage 3) VR max. 5 VPower consumption Ptot max. 140 mWESD withstand voltageacc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)VESD max. 2 kVF = 70 mA; tp = 20 ms; TA = 25 °CParameter Symbol ValuesPeak wavelength λpeak typ. 950 nmCentroid wavelength λcentroid typ. 940 nmSpectral bandwidth at 50% Irel,max (FWHM)IF = 70 mA; tp = 10 ms∆λ typ. 42 nmHalf angle φ typ. 70 °Dimensions of active chip area L x W typ. 0.2 x 0.2mm x mmRise time (10% / 90%)IF = 70 mA; RL = 50 Ωtr typ. 12 nsFall time (10% / 90%)IF = 70 mA; RL = 50 Ωtf typ. 12 nsForward voltage 4) VF typ.max.1.6 V1.9 VForward voltageIF = 500 mA; tp = 100 µsVF typ. 2.4 VReverse current 3)VR = 5 VIR typ.max.0.01 µA10 µATotal radiant flux 5) Φe typ. 35 mWTemperature coefficient of voltage TCV typ. -1.3 mV / KTemperature coefficient of brightness TCI typ. -0.5 % / KTemperature coefficient of wavelengthIF = 70 mA; tp = 10 msTCλ typ. 0.3 nm / KThermal resistance junction solder point real 6) RthJS real max. 350 K / WThermal resistance junction ambient real 7) RthJA max. 450 K / W