ParametersColor of emissionInfrared (>800 nm)CurrentIF70 mAPeak wavelengthλ950 nmBrightnessΦE40 mWIE90 mW/srBeam angle∢18 °Dimensionl3.0 mmw1.2 mmh1.1 mmOperating temperatureTop min.-40 °CTop max.85 °CApplication fieldsIndustrialFactory automationAppliances & toolsAccess control & securityMobile & wearablesBody tracking
Maximum RatingsTA = 25 °CParameter Symbol ValuesOperating temperature Top min.max.-40 °C85 °CStorage temperature Tstg min.max.-40 °C85 °CForward current IF max. 70 mAForward current pulsedtp ≤ 100 µs; D ≤ 0.005 IF pulse max. 0.7 AReverse voltage 3) VR max. 5 VPower consumption Ptot max. 140 mWESD withstand voltageacc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)VESD max. 2 kV
CharacteristicsIF = 70 mA; tp = 20 ms; TA = 25 °CParameter Symbol ValuesPeak wavelength λpeak typ. 950 nmCentroid wavelength λcentroid typ. 940 nmSpectral bandwidth at 50% Irel,max (FWHM)IF = 70 mA; tp = 10 ms∆λ typ. 42 nmHalf angle φ typ. 9 °Dimensions of active chip area L x W typ. 0.2 x 0.2mm x mmRise time (10% / 90%)IF = 70 mA; RL = 50 Ωtr typ. 12 nsFall time (10% / 90%)IF = 70 mA; RL = 50 Ωtf typ. 12 nsForward voltage 4) VF typ.max.1.5 V1.75 VForward voltageIF = 700 mA; tp = 100 µsVF typ. 2.8 VReverse current 3)VR = 5 VIR typ.max.0.01 µA10 µARadiant intensity 1)IF = 700 mA; tp = 25 µsIe typ. 540 mW/srTotal radiant flux 5) Φe typ. 40 mWTemperature coefficient of voltage TCV typ. -1.3 mV / KTemperature coefficient of brightness TCI typ. -0.5 % / KTemperature coefficient of wavelengthIF = 70 mA; tp = 10 msTCλ typ. 0.3 nm / KThermal resistance junction solder point real 6) RthJS real max. 360 K / WThermal resistance junction ambient real 7) RthJA max. 540 K / W