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DescriptionHigh Power Infrared Emitter (940 nm)DatasheetSelect & orderContact usSupport

ParametersColor of emissionInfrared (>800 nm)CurrentIF100 mAPeak wavelengthλ950 nmBrightnessΦE55 mWIE60 mW/srBeam angle∢40 °Dimensionl3.0 mmw2.4 mmh1.2 mmOperating temperatureTop min.-40 °CTop max.85 °CApplication fieldsIndustrialFactory automationAppliances & toolsAccess control & securityMobile & wearablesBody tracking

Maximum RatingsTA = 25 °CParameter Symbol ValuesOperating temperature Top min.max.-40 °C85 °CStorage temperature Tstg min.max.-40 °C85 °CJunction temperature Tj max. 100 °CForward current IF max. 100 mAForward current pulsedtp ≤ 440 µs; D ≤ 0.005 IF pulse max. 1 AReverse voltage 3) VR max. 5 VPower consumption Ptot max. 180 mWESD withstand voltageacc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)VESD max. 2 kV
CharacteristicsIF = 100 mA; tp = 20 ms; TA = 25 °CParameter Symbol ValuesPeak wavelength λpeak typ. 950 nmCentroid wavelength λcentroid typ. 940 nmSpectral bandwidth at 50% Irel,max (FWHM) ∆λ typ. 42 nmHalf angle φ typ. 20 °Dimensions of active chip area L x W typ. 0.3 x 0.3mm x mmRise time (10% / 90%)IF = 100 mA; RL = 50 Ωtr typ. 12 nsFall time (10% / 90%)IF = 100 mA; RL = 50 Ωtf typ. 12 nsForward voltage 4) VF typ.max.1.5 V1.7 VForward voltageIF = 1 A; tp = 100 µsVF typ. 2.3 VReverse current 3)VR = 5 VIR typ.max.0.01 µA10 µARadiant intensity 1)IF = 1 A; tp = 100 µsIe typ. 435 mW/srTotal radiant flux 5)IF = 100 mA; tp = 20 msΦe typ. 55 mWTemperature coefficient of voltage TCV typ. -1.3 mV / KTemperature coefficient of brightness TCI typ. -0.5 % / KTemperature coefficient of wavelength TCλ typ. 0.3 nm / KThermal resistance junction solder point real 6) RthJS real max. 280 K / W