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DescriptionHigh Power Infrared Emitter (850 nm)DatasheetSelect & orderContact usSupport

ParametersColor of emissionInfrared (>800 nm)CurrentIF1000 mAPeak wavelengthλ860 nmBrightnessΦE1150 mWIE280 mW/srBeam angle∢130 °Dimensionl1.6 mmw1.6 mmh0.81 mmOperating temperatureTop min.-40 °CTop max.105 °CApplication fieldsAutomotive & mobilityIn-cabin sensing

Maximum RatingsTA = 25 °CParameter Symbol ValuesOperating temperature Top min.max.-40 °C105 °CStorage temperature Tstg min.max.-40 °C105 °CJunction temperature Tj max. 145 °CForward current IF max. 1000 mAForward current pulsedtp ≤ 600 µs; D ≤ 0.005IF pulse max. 2 AReverse voltage 3) VR max. 5 VPower consumption Ptot max. 3600 mWESD withstand voltageacc. to ANSI/ESDA/JEDEC JS-001 (HBM)VESD max. 2 kV
CharacteristicsIF = 1000 mA; tp = 10 ms; TA = 25 °CParameter Symbol ValuesPeak wavelength λpeak typ. 860 nmCentroid wavelength λcentroid typ. 850 nmSpectral bandwidth at 50% Irel,max (FWHM) ∆λ typ. 30 nmHalf angle φ typ. 65 °Dimensions of chip area L x W typ. 0.73 x 0.73mm x mmRise time (10% / 90%)IF = 2 A; RL = 5 Ωtr typ. 9 nsFall time (10% / 90%)IF = 2 A; RL = 5 Ωtf typ. 16 nsForward voltage 4) VF typ.max.3.25 V3.6 VForward voltage 4)IF = 2 A; tp = 100 µsVF typ.max.3.7 V4.2 VReverse current 3)VR = 5 VIR typ.max.0.01 µA10 µARadiant intensity 5)IF = 1 A; tp = 10 msIe typ. 280 mW/srTemperature coefficient of voltage TCV typ. -2 mV / KTemperature coefficient of wavelength TCλ typ. 0.3 nm / KThermal resistance junction solder point electrical 6)with efficiency ηe = 38 %RthJS elec. typ.max.6.8 K / W8.1 K / WThermal resistance junction solder point real 6) RthJS real typ.max.11.0 K / W13.0 K / W