ParametersColor of emissionInfrared (>800 nm)CurrentIF1000 mAPeak wavelengthλ860 nmBrightnessΦE700 mWIE400 mW/srBeam angle∢70 °Dimensionl1.6 mmw1.6 mmh1.72 mmOperating temperatureTop min.-40 °CTop max.105 °CApplication fieldsIndustrialHome & building automationFactory automationAccess control & securityMobile & wearablesAuthenticationBody trackingMedical & healthMedical Lighting
Maximum RatingsTA = 25 °CParameter Symbol ValuesOperating temperature Top min.max.-40 °C105 °CStorage temperature Tstg min.max.-40 °C105 °CJunction temperature Tj max. 145 °CForward current IF max. 1000 mAForward current pulsed IF pulse max. 1000 mAReverse voltage 3) VR max. 5 VESD withstand voltageacc. to ANSI/ESDA/JEDEC JS-001 (HBM)VESD max. 2 kVCharacteristicsIF = 1000 mA; tp = 10 ms; TA = 25 °CParameter Symbol ValuesPeak wavelength λpeak typ. 860 nmCentroid wavelength λcentroid typ. 850 nmSpectral bandwidth at 50% Irel,max (FWHM) ∆λ typ. 34 nmHalf angle φ typ. 35 °Dimensions of chip area L x W typ. 0.73 x 0.73mm x mmRise time (10% / 90%)IF = 1 A; RL = 50 Ωtr typ. 11 nsFall time (10% / 90%)IF = 1 A; RL = 50 Ωtf typ. 15 nsForward voltage 4) VF typ.max.1.75 V2.05 VReverse current 3) IR typ.max.0.01 µA10 µATotal radiant flux 5)IF = 1 A; tp = 10 msΦe typ. 700 mWTemperature coefficient of voltage TCV typ. -1 mV / KTemperature coefficient of brightness TCI typ. -0.3 % / KTemperature coefficient of wavelength TCλ typ. 0.3 nm / KThermal resistance junction solder point real 6) RthJS real max. 13 K / W