DescriptionInfrared Emitter (850 nm)DatasheetSelect & orderContact usSupport

ParametersColor of emissionInfrared (>800 nm)CurrentIF100 mAPeak wavelengthλ860 nmBrightnessΦE80 mWIE90 mW/srBeam angle∢40 °Dimensionl3.8 mmw3.8 mmh3.9 mmOperating temperatureTop min.-40 °CTop max.100 °CApplication fieldsIndustrialHome & building automationAppliances & toolsAccess control & security
Maximum RatingsTA = 25 °CParameter Symbol ValuesOperating temperature Top min.max.-40 °C100 °CStorage temperature Tstg min.max.-40 °C100 °CJunction temperature Tj max. 100 °CForward current IF max. 100 mAForward current pulsedtp ≤ 200 µs; D ≤ 0.005 IF pulse max. 1 AReverse voltage 3) VR max. 5 VPower consumption Ptot max. 200 mWESD withstand voltageacc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)VESD max. 2 kV
CharacteristicsIF = 100 mA; tp = 20 ms; TA = 25 °CParameter Symbol ValuesPeak wavelength λpeak typ. 860 nmCentroid wavelength λcentroid typ. 850 nmSpectral bandwidth at 50% Irel,max (FWHM) ∆λ typ. 30 nmHalf angle φ typ. 20 °Dimensions of active chip area L x W typ. 0.3 x 0.3mm x mmRise time (10% / 90%)IF = 100 mA; RL = 50 Ωtr typ. 12 nsFall time (10% / 90%)IF = 100 mA; RL = 50 Ωtf typ. 12 nsForward voltage 4) VF typ.max.1.7 V1.9 VForward voltage 4)IF = 1 A; tp = 100 µsVF typ.max.3.6 V4.5 VReverse current 3)VR = 5 VIR typ.max.0.01 µA10 µARadiant intensity 1)IF = 1 A; tp = 100 µsIe typ. 370 mW/srTotal radiant flux 5) Φe typ. 80 mWTemperature coefficient of voltage TCV typ. -0.6 mV / KTemperature coefficient of brightness TCI typ. -0.3 % / KTemperature coefficient of wavelength TCλ typ. 0.3 nm / KThermal resistance junction solder point real 6) RthJS real max. 150 K / WThermal resistance junction ambient real 7) RthJA max. 350 K / W